Device-related Systems – MD-P300HS Flip-chip Bonder

MD-P300HS Flip-chip Bonder

Improves semiconductor manufacturing productivity and realizes high-quality and high-precision bonding

Low-temperature bonding by ultrasonic technology reduces damage to devices and significantly reduces process time
The post-bonding process can be introduced at low cost due to compatibility with conventional equipment and materials
Improved bonding accuracy of ultrasonic technology from ±5 μm to ±3 μm enables higher performance and thinner semiconductor packages such as FCBGA, FCCSP, and optical communication devices
Real-time monitoring (Bond force, voltage/current/power, impedance, bump crush height, etc.) enables stable quality control by detecting abnormalities in the bonding process

Strengths and Features

The bonding accuracy of conventional ultrasonic technology has been improved from ±5 μm to ±3 μm to meet the needs for higher performance and thinner packaging of next-generation semiconductors such as FCBGA (flip-chip ball grid array), FCCSP (flip-chip chip size package), and optical communication devices.

Stable quality control is achieved with the ability to constantly monitor conditions during bonding and to monitor process abnormalities such as bond force, voltage/current/power, impedance and bump crush height in real time.

	MD-P300HS Flip-chip Bonder
Placement Accuracy	XY = ± 0.003 mm ( 3σ ) 、θ = ± 0.05 ゜ ( 3σ )
Substrate dimensions	L 240 mm × W 70 mm ～Ｌ101 mm × W 300 mm
Die dimensions (mm)	L 2 mm × W 2 mm to Ｌ8 mm × W 8 mm *Dies with a diagonal length ≦ 10 mm
Die Supply	Wafer frame 12 inches ( Option : 8 inches )
Bonding Load	VCM head ( 90 N head )　Bonding ( static ) load : 2 to 90 N ( VCM load control ) 1 to 90 N ( handled individually )